AP4435GM-HF Todos los transistores

 

AP4435GM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4435GM-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.6 nS
   Cossⓘ - Capacitancia de salida: 195 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: SO8
 

 Búsqueda de reemplazo de AP4435GM-HF MOSFET

   - Selección ⓘ de transistores por parámetros

 

AP4435GM-HF Datasheet (PDF)

 ..1. Size:202K  ape
 ap4435gm-hf.pdf pdf_icon

AP4435GM-HF

AP4435GM-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDDD Low On-resistance RDS(ON) 20mD Fast Switching Characteristic ID -9AGS RoHS CompliantSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

 6.1. Size:54K  ape
 ap4435gm.pdf pdf_icon

AP4435GM-HF

AP4435GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VDD Low On-resistance D RDS(ON) 20mD Fast Switching Characteristic ID -9AGSSSO-8 SDescriptionDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device d

 6.2. Size:2937K  cn vbsemi
 ap4435gm.pdf pdf_icon

AP4435GM-HF

AP4435GMwww.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET- 30 13 nC 100 % Rg Tested0.024 at VGS = - 4.5 V - 7.8APPLICATIONS Load Switch Battery SwitchS SO-8S1 8 DG S D2 7S3 6 D

 7.1. Size:214K  ape
 ap4435gh ap4435gj.pdf pdf_icon

AP4435GM-HF

AP4435GH/JRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30VD Lower On-resistance RDS(ON) 20m Fast Switching Characteristic ID -40AGSDescriptionGThe TO-252 package is widely preferred for all commercial-industrialDS TO-252(H)surface mount applications and suited for low voltag

MOSTRAR MÁS

Otros transistores... AP4433GM-HF , AP4434AGH-HF , AP4434AGM-HF , AP4434AGYT-HF , AP4434GH-HF , AP4434GM , AP4435GH-HF , AP4435GJ-HF , IRLZ44N , AP4435GYT-HF , AP4436GM , AP4437GM-HF , AP4438AGM-HF , AP4438BGM-HF , AP4438CGM-HF , AP4438GM-HF , AP4438GSM-HF .

History: SPD07N20G | IPB055N03L | NCE60NF260

 

 
Back to Top

 


 
.