AP4528GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4528GM
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.8(4.5) A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 7 nC
trⓘ - Tiempo de subida: 9(6.4) nS
Cossⓘ - Capacitancia de salida: 70(110) pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.036(0.06) Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de MOSFET AP4528GM
AP4528GM Datasheet (PDF)
ap4528gm.pdf
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ap4528gh.pdf
AP4528GHRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD1/D2 Good Thermal Performance RDS(ON) 32m Fast Switching Performance ID 7.4AS1P-CH BVDSS -40VG1S2G2RDS(ON) 52mDescription ID -6.1ATO-252-4LD1D2The Advanced Power MOSFETs from APEC provide thedesign
ap4526agh-hf.pdf
AP4526AGH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD1/D2 Good Thermal Performance RDS(ON) 32m Fast Switching Performance ID 7.7AS1 RoHS Compliant & Halogen-Free P-CH BVDSS -40VG1S2RDS(ON) 42mG2Description ID -6.7ATO-252-4LD1D2Advanced Power MOSFE
ap4527gn3.pdf
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ap4525geh-hf.pdf
AP4525GEH-HFHalogen-Free ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD1/D2 Good Thermal Performance RDS(ON) 28m Fast Switching Performance ID 15AS1G1S2 RoHS Compliant P-CH BVDSS -40VG2RDS(ON) 42mTO-252-4LDescription ID -12AAdvanced Power MOSFETs from APEC provide the
ap4525geh.pdf
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ap4526gh.pdf
AP4526GHRoHS-compliant ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD1/D2 Simple Drive Requirement N-CH BVDSS 40V Good Thermal Performance RDS(ON) 32m Fast Switching Performance ID 7.6AS1P-CH BVDSS -40VG1S2G2RDS(ON) 42mTO-252-4LDescription ID -6.6AD1D2The Advanced Power MOSFETs from APEC provide thedesign
ap4529gh.pdf
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ap4527gh.pdf
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ap4525gem.pdf
AP4525GEM-HFHalogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET N-CH BVDSS 40V Simple Drive Requirement D2D2D1 RDS(ON) 28m Low On-resistance D1 ID 6A Fast Switching Performance G2S2 RoHS Compliant & Halogen-Free P-CH BVDSS -40VG1S1SO-8RDS(ON
ap4525gem-hf.pdf
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ap4523gh.pdf
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ap4521geh.pdf
AP4521GEHPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40VD1/D2 Good Thermal Performance RDS(ON) 36m Fast Switching Performance ID 11.7AS1G1S2 RoHS Compliant P-CH BVDSS -40VG2RDS(ON) 72mTO-252-4LDescription ID -8.7AThe Advanced Power MOSFETs from APEC provid
ap4523gd.pdf
AP4523GDPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD2Low Gate Charge N-CH BVDSS 40V D2D1 Fast Switching Speed RDS(ON) 40mD1 PDIP-8 Package ID 5.6A RoHS Compliant P-CH BVDSS -40V G2S2PDIP-8G1RDS(ON) 52mS1Description ID -5.1AThe
ap4521gem.pdf
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ap4523gm.pdf
AP4523GMPb Free Plating ProductAdvanced Power N AND P-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETSimple Drive Requirement N-CH BVDSS 40V D2D2Low On-resistance RDS(ON) 30m D1D1Fast Switching Performance ID 6.8A G2 RoHS Compliant P-CH BVDSS -40VS2G1SO-8 S1RDS(ON) 52mDescript
ap4525geh.pdf
AP4525GEHwww.VBsemi.twN- and P-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETN-CHANNEL P-CHANNELd 100 % Rg and UIS TestedVDS (V) 40 - 40RDS(on) () at VGS = 10 V 0.014 0.014RDS(on) () at VGS = 4.5 V 0.016 0.016APPLICATIONSID (A) 50 - 50 CCFL InverterConfiguration N- and P-PairTO-252-4L D-PAK D1/D2 D1/D2 Top V
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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Recientemente añadidas las descripciónes de los transistores:
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