AP4529GH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4529GH
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 3.125 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 7.4(6.6) A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 15(33) nS
Cossⓘ - Capacitancia de salida: 70(110) pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.032(0.042) Ohm
Encapsulados: TO252-4L
Búsqueda de reemplazo de AP4529GH MOSFET
- Selecciónⓘ de transistores por parámetros
AP4529GH datasheet
..1. Size:190K ape
ap4529gh.pdf 
AP4529GH RoHS-compliant Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40V D1/D2 Good Thermal Performance RDS(ON) 32m Fast Switching Performance ID 7.4A S1 P-CH BVDSS -40V G1 S2 RDS(ON) 42m G2 Description ID -6.6A TO-252-4L D1 D2 The Advanced Power MOSFETs from APEC provide the design
9.1. Size:120K ape
ap4526agh-hf.pdf
AP4526AGH-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40V D1/D2 Good Thermal Performance RDS(ON) 32m Fast Switching Performance ID 7.7A S1 RoHS Compliant & Halogen-Free P-CH BVDSS -40V G1 S2 RDS(ON) 42m G2 Description ID -6.7A TO-252-4L D1 D2 Advanced Power MOSFE
9.2. Size:95K ape
ap4527gn3.pdf
AP4527GN3 Preliminary Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 D2 Bottom Exposed DFN N-CH BVDSS 20V D1 D1 Low On-resistance RDS(ON) 35m Lower Profile ID 4.7A S2 G2 S1 DFN3*3 RoHS Compliant G1 P-CH BVDSS -20V RDS(ON) 65m ID -3.3A D2 D1 G1 G2 S2 S1 Absolute Maximum Ratings Symbol Parameter Rating Units N-channe
9.3. Size:115K ape
ap4525geh-hf.pdf
AP4525GEH-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40V D1/D2 Good Thermal Performance RDS(ON) 28m Fast Switching Performance ID 15A S1 G1 S2 RoHS Compliant P-CH BVDSS -40V G2 RDS(ON) 42m TO-252-4L Description ID -12A Advanced Power MOSFETs from APEC provide the
9.4. Size:192K ape
ap4525geh.pdf
AP4525GEH RoHS-compliant Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40V D1/D2 Good Thermal Performance RDS(ON) 28m Fast Switching Performance ID 15A S1 G1 S2 P-CH BVDSS -40V G2 RDS(ON) 42m TO-252-4L Description ID -12A Advanced Power MOSFETs from APEC provide the designer with the b
9.5. Size:190K ape
ap4526gh.pdf
AP4526GH RoHS-compliant Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D1/D2 Simple Drive Requirement N-CH BVDSS 40V Good Thermal Performance RDS(ON) 32m Fast Switching Performance ID 7.6A S1 P-CH BVDSS -40V G1 S2 G2 RDS(ON) 42m TO-252-4L Description ID -6.6A D1 D2 The Advanced Power MOSFETs from APEC provide the design
9.6. Size:192K ape
ap4527gh.pdf
AP4527GH RoHS-compliant Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D1/D2 Simple Drive Requirement N-CH BVDSS 40V Good Thermal Performance RDS(ON) 32m Fast Switching Performance ID 7.6A S1 G1 P-CH BVDSS -40V S2 G2 RDS(ON) 52m TO-252-4L Description ID -6.1A D1 D2 The Advanced Power MOSFETs from APEC provide the design
9.7. Size:202K ape
ap4525gem.pdf
AP4525GEM-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET N-CH BVDSS 40V Simple Drive Requirement D2 D2 D1 RDS(ON) 28m Low On-resistance D1 ID 6A Fast Switching Performance G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -40V G1 S1 SO-8 RDS(ON
9.8. Size:124K ape
ap4525gem-hf.pdf
AP4525GEM-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40V D2 D2 D1 Low On-resistance RDS(ON) 28m D1 Fast Switching Performance ID 6A G2 S2 RoHS Compliant P-CH BVDSS -40V G1 S1 SO-8 RDS(ON) 42m Description ID -5A Advanced Power MOSFETs from APEC provide the desi
9.9. Size:205K ape
ap4528gm.pdf
AP4528GM RoHS-compliant Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40V D2 D2 Fast Switching Performance RDS(ON) 36m D1 D1 Lower Gate Charge ID 5.8A G2 S2 P-CH BVDSS -40V G1 S1 SO-8 RDS(ON) 60m Description ID -4.5A The Advanced Power MOSFETs from APEC provide the designer with the
9.10. Size:96K ape
ap4523gh.pdf
AP4523GH Pb Free Plating Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40V D1/D2 Good Thermal Performance RDS(ON) 45m Fast Switching Performance ID 13A S1 G1 S2 RoHS Compliant P-CH BVDSS -40V G2 RDS(ON) 60m TO-252-4L Descripti
9.11. Size:117K ape
ap4521geh.pdf
AP4521GEH Pb Free Plating Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40V D1/D2 Good Thermal Performance RDS(ON) 36m Fast Switching Performance ID 11.7A S1 G1 S2 RoHS Compliant P-CH BVDSS -40V G2 RDS(ON) 72m TO-252-4L Description ID -8.7A The Advanced Power MOSFETs from APEC provid
9.12. Size:96K ape
ap4523gd.pdf
AP4523GD Pb Free Plating Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Low Gate Charge N-CH BVDSS 40V D2 D1 Fast Switching Speed RDS(ON) 40m D1 PDIP-8 Package ID 5.6A RoHS Compliant P-CH BVDSS -40V G2 S2 PDIP-8 G1 RDS(ON) 52m S1 Description ID -5.1A The
9.13. Size:115K ape
ap4521gem.pdf
AP4521GEM Pb Free Plating Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40V D2 D2 Fast Switching Performance RDS(ON) 36m D1 D1 RoHS Compliant ID 5.8A G2 P-CH BVDSS -40V S2 G1 S1 SO-8 RDS(ON) 72m Description ID -4.1A The Advanced Power MOSFETs from APEC provide the designer with the b
9.14. Size:133K ape
ap4523gm.pdf
AP4523GM Pb Free Plating Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40V D2 D2 Low On-resistance RDS(ON) 30m D1 D1 Fast Switching Performance ID 6.8A G2 RoHS Compliant P-CH BVDSS -40V S2 G1 SO-8 S1 RDS(ON) 52m Descript
9.15. Size:190K ape
ap4528gh.pdf
AP4528GH RoHS-compliant Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40V D1/D2 Good Thermal Performance RDS(ON) 32m Fast Switching Performance ID 7.4A S1 P-CH BVDSS -40V G1 S2 G2 RDS(ON) 52m Description ID -6.1A TO-252-4L D1 D2 The Advanced Power MOSFETs from APEC provide the design
9.16. Size:1242K cn vbsemi
ap4525geh.pdf
AP4525GEH www.VBsemi.tw N- and P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET N-CHANNEL P-CHANNEL d 100 % Rg and UIS Tested VDS (V) 40 - 40 RDS(on) ( ) at VGS = 10 V 0.014 0.014 RDS(on) ( ) at VGS = 4.5 V 0.016 0.016 APPLICATIONS ID (A) 50 - 50 CCFL Inverter Configuration N- and P-Pair TO-252-4L D-PAK D1/D2 D1/D2 Top V
Otros transistores... AP4525GEH
, AP4525GEM-HF
, AP4526AGH-HF
, AP4526GH
, AP4527GH
, AP4527GN3
, AP4528GH
, AP4528GM
, IRF630
, AP4530GH
, AP4530GM
, AP4531GH
, AP4531GM
, AP4532GM-HF
, AP4533GEM-HF
, AP4537GYT-HF
, AP4539GM-HF
.
History: BSR302N
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