2SK580L Todos los transistores

 

2SK580L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK580L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 1.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
   Paquete / Cubierta: DPAK

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2SK580L Datasheet (PDF)

 ..1. Size:354K  inchange semiconductor
2sk580l.pdf

2SK580L
2SK580L

isc N-Channel MOSFET Transistor 2SK580LFEATURESDrain Current : I = 1.5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 8.1. Size:49K  hitachi
2sk579 2sk580.pdf

2SK580L

 8.2. Size:286K  inchange semiconductor
2sk580s.pdf

2SK580L
2SK580L

isc N-Channel MOSFET Transistor 2SK580SFEATURESDrain Current : I = 1.5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 9.1. Size:57K  sanyo
2sk583.pdf

2SK580L
2SK580L

Ordering number:EN1793BN-Channel Enhancement Silicon MOSFET2SK583Analog Switch ApplicationsApplications Package Dimensions Analog switches, low-pass filters. unit:mm2005CFeatures [2SK583]5.0 Large yfs .4.04.0 Enhancement type. Small ON-resistance.0.450.50.440.451 : Drain2 : Source3 : Gate1 2 3JEDEC : TO-92EIAJ : SC-431.3 1.3SA

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