2SK580L MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK580L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 95 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: DPAK
2SK580L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK580L Datasheet (PDF)
2sk580l.pdf
isc N-Channel MOSFET Transistor 2SK580LFEATURESDrain Current : I = 1.5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk580s.pdf
isc N-Channel MOSFET Transistor 2SK580SFEATURESDrain Current : I = 1.5A@ T =25D CDrain Source Voltage: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 6.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk583.pdf
Ordering number:EN1793BN-Channel Enhancement Silicon MOSFET2SK583Analog Switch ApplicationsApplications Package Dimensions Analog switches, low-pass filters. unit:mm2005CFeatures [2SK583]5.0 Large yfs .4.04.0 Enhancement type. Small ON-resistance.0.450.50.440.451 : Drain2 : Source3 : Gate1 2 3JEDEC : TO-92EIAJ : SC-431.3 1.3SA
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: TPC8A03-H
History: TPC8A03-H
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