AP4800BGM-HF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4800BGM-HF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm

Encapsulados: SO8

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AP4800BGM-HF datasheet

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 ap4800bgm-hf.pdf pdf_icon

AP4800BGM-HF

AP4800BGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 18m D D Fast Switching Characteristic ID 9.6A G RoHS Compliant S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

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 ap4800gm.pdf pdf_icon

AP4800BGM-HF

AP4800GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 25V D D Fast Switching D RDS(ON) 18m D Simple Drive Requirement ID 9A G S S SO-8 S Description D D The Advanced Power MOSFETs from APEC provide the designer with the best combination of

 8.2. Size:94K  ape
 ap4800dgm-hf.pdf pdf_icon

AP4800BGM-HF

AP4800DGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 18m D Fast Switching Characteristic ID 9A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fas

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 ap4800gyt-hf.pdf pdf_icon

AP4800BGM-HF

AP4800GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 13m RoHS Compliant ID 13A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, ruggedized device design, low on-resis

MOSTRAR MÁS

Otros transistores... AP4569GH, AP4569GM, AP4575GH-HF, AP4575GM-HF, AP4578GD, AP4578GH-HF, AP4578GM-HF, AP4800AGM-HF, 5N60, AP4800CGM-HF, AP4800DGM-HF, AP4800GM, AP4800GYT-HF, AP4810GSM, AP4813GSM-HF, AP4813GYT-HF, AP4820AGYT-HF