AP4800BGM-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP4800BGM-HF
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 9.6 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 150 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm
Тип корпуса: SO8
Аналог (замена) для AP4800BGM-HF
AP4800BGM-HF Datasheet (PDF)
ap4800bgm-hf.pdf
AP4800BGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Low On-resistance RDS(ON) 18mDD Fast Switching Characteristic ID 9.6AG RoHS Compliant SSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,
ap4800gm.pdf
AP4800GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow On-Resistance BVDSS 25V DDFast Switching D RDS(ON) 18m DSimple Drive Requirement ID 9A GSSSO-8SDescriptionDDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of
ap4800dgm-hf.pdf
AP4800DGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 18mD Fast Switching Characteristic ID 9AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fas
ap4800gyt-hf.pdf
AP4800GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 13m RoHS Compliant ID 13AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching,ruggedized device design, low on-resis
ap4800gem.pdf
AP4800GEMHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 18mD Low On-resistance ID 9.2AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP4800 series are from Advanced Power innovated design andGsilicon process technolog
ap4800agm.pdf
AP4800AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Low On-resistance RDS(ON) 18mDD Fast Switching Characteristic ID 9.6AGSSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device de
ap4800agm-hf.pdf
AP4800AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Low On-resistance RDS(ON) 18mDD Fast Switching Characteristic ID 9.6AG RoHS Compliant SSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,
ap4800cgm-hf.pdf
AP4800CGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 14mD Fast Switching Characteristic ID 10.4AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of
ap4800n2.pdf
AP4800N2Halogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Fast Switching Characteristic G RDS(ON) 18m Small Size & Lower Profile ID 9A Halogen Free & RoHS Compliant ProductSTop viewDD D SDescriptionDSAP4800 series are from Advanced Power innovated design andsilicon proc
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Список транзисторов
Обновления
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