AP4800GM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4800GM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10.5 nS
Cossⓘ - Capacitancia de salida: 245 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de AP4800GM MOSFET
AP4800GM Datasheet (PDF)
ap4800gm.pdf
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ap4800gyt-hf.pdf
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ap4800gem.pdf
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ap4800dgm-hf.pdf
AP4800DGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 18mD Fast Switching Characteristic ID 9AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fas
Otros transistores... AP4575GM-HF , AP4578GD , AP4578GH-HF , AP4578GM-HF , AP4800AGM-HF , AP4800BGM-HF , AP4800CGM-HF , AP4800DGM-HF , AO3407 , AP4800GYT-HF , AP4810GSM , AP4813GSM-HF , AP4813GYT-HF , AP4820AGYT-HF , AP4820GYT-HF , AP4835GM , AP4835GMT-HF .
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