AP4810GSM Todos los transistores

 

AP4810GSM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4810GSM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm

Encapsulados: SO8

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AP4810GSM datasheet

 ..1. Size:105K  ape
 ap4810gsm.pdf pdf_icon

AP4810GSM

AP4810GSM RoHS-compliant Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE Simple Drive Requirement BVDSS 30V D D D Good Recovery Time RDS(ON) 13.5m D Fast Switching Performance ID 11A G S S SO-8 S D Description Advanced Power MOSFETs from APEC provide the Schottky Diode G designer with the best combination of fast switching, rugge

 9.1. Size:131K  ape
 ap4816gsm.pdf pdf_icon

AP4810GSM

AP4816GSM RoHS-compliant Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp. SCHOTTKY DIODE S1/D2 Simple Drive Requirement CH-1 BVDSS 30V S1/D2 S1/D2 DC-DC Converter Suitable RDS(ON) 22m D1 Fast Switching Performance ID 6.7A G2 CH-2 BVDSS 30V S2/A S2/A SO-8 RDS(ON) 13m G1 Description ID 11.5A The Advanced Power MOSFETs from APEC provide the des

 9.2. Size:60K  ape
 ap4813gyt-hf.pdf pdf_icon

AP4810GSM

AP4813GYT-HF Halogen-Free Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE D Simple Drive Requirement BVDSS 30V Good Recovery Time RDS(ON) 10m Schottky Diode Small Size & Lower Profile ID 15A G RoHS Compliant & Halogen-Free S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fas

 9.3. Size:102K  ape
 ap4813gsm-hf.pdf pdf_icon

AP4810GSM

AP4813GSM-HF Halogen-Free Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE Simple Drive Requirement BVDSS 30V D D D Good Recovery Time RDS(ON) 9m D Fast Switching Performance ID 13A G S RoHS Compliant & Halogen-Free S SO-8 S D Description Advanced Power MOSFETs from APEC provide the Schottky Diode G designer with the best comb

MOSTRAR MÁS

Otros transistores... AP4578GH-HF , AP4578GM-HF , AP4800AGM-HF , AP4800BGM-HF , AP4800CGM-HF , AP4800DGM-HF , AP4800GM , AP4800GYT-HF , 20N50 , AP4813GSM-HF , AP4813GYT-HF , AP4820AGYT-HF , AP4820GYT-HF , AP4835GM , AP4835GMT-HF , 2SK1940-01 , 2SK2552 .

History: KI2305DS | AP50T10AGI-HF

 

 

 

 

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