AP4810GSM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4810GSM
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0135 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de AP4810GSM MOSFET
AP4810GSM Datasheet (PDF)
ap4810gsm.pdf
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ap4813gyt-hf.pdf
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ap4813gsm-hf.pdf
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Otros transistores... AP4578GH-HF , AP4578GM-HF , AP4800AGM-HF , AP4800BGM-HF , AP4800CGM-HF , AP4800DGM-HF , AP4800GM , AP4800GYT-HF , 20N50 , AP4813GSM-HF , AP4813GYT-HF , AP4820AGYT-HF , AP4820GYT-HF , AP4835GM , AP4835GMT-HF , 2SK1940-01 , 2SK2552 .
History: ST18N10D | AO4606A | SMP40N10 | SSM3K344R | AP9561GJ | KPE4703A | 2SK1273
History: ST18N10D | AO4606A | SMP40N10 | SSM3K344R | AP9561GJ | KPE4703A | 2SK1273
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