AP4810GSM PDF and Equivalents Search

 

AP4810GSM Specs and Replacement


   Type Designator: AP4810GSM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: SO8
 

 AP4810GSM substitution

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AP4810GSM datasheet

 ..1. Size:105K  ape
 ap4810gsm.pdf pdf_icon

AP4810GSM

AP4810GSM RoHS-compliant Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE Simple Drive Requirement BVDSS 30V D D D Good Recovery Time RDS(ON) 13.5m D Fast Switching Performance ID 11A G S S SO-8 S D Description Advanced Power MOSFETs from APEC provide the Schottky Diode G designer with the best combination of fast switching, rugge... See More ⇒

 9.1. Size:131K  ape
 ap4816gsm.pdf pdf_icon

AP4810GSM

AP4816GSM RoHS-compliant Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp. SCHOTTKY DIODE S1/D2 Simple Drive Requirement CH-1 BVDSS 30V S1/D2 S1/D2 DC-DC Converter Suitable RDS(ON) 22m D1 Fast Switching Performance ID 6.7A G2 CH-2 BVDSS 30V S2/A S2/A SO-8 RDS(ON) 13m G1 Description ID 11.5A The Advanced Power MOSFETs from APEC provide the des... See More ⇒

 9.2. Size:60K  ape
 ap4813gyt-hf.pdf pdf_icon

AP4810GSM

AP4813GYT-HF Halogen-Free Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE D Simple Drive Requirement BVDSS 30V Good Recovery Time RDS(ON) 10m Schottky Diode Small Size & Lower Profile ID 15A G RoHS Compliant & Halogen-Free S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fas... See More ⇒

 9.3. Size:102K  ape
 ap4813gsm-hf.pdf pdf_icon

AP4810GSM

AP4813GSM-HF Halogen-Free Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE Simple Drive Requirement BVDSS 30V D D D Good Recovery Time RDS(ON) 9m D Fast Switching Performance ID 13A G S RoHS Compliant & Halogen-Free S SO-8 S D Description Advanced Power MOSFETs from APEC provide the Schottky Diode G designer with the best comb... See More ⇒

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Detailed specifications: AP4578GH-HF , AP4578GM-HF , AP4800AGM-HF , AP4800BGM-HF , AP4800CGM-HF , AP4800DGM-HF , AP4800GM , AP4800GYT-HF , 20N50 , AP4813GSM-HF , AP4813GYT-HF , AP4820AGYT-HF , AP4820GYT-HF , AP4835GM , AP4835GMT-HF , 2SK1940-01 , 2SK2552 .

Keywords - AP4810GSM MOSFET specs

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