AP4813GSM-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4813GSM-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 13 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 VQgⓘ - Carga de la puerta: 11.5 nC
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 205 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de AP4813GSM-HF MOSFET
AP4813GSM-HF Datasheet (PDF)
ap4813gsm-hf.pdf

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Otros transistores... AP4578GM-HF , AP4800AGM-HF , AP4800BGM-HF , AP4800CGM-HF , AP4800DGM-HF , AP4800GM , AP4800GYT-HF , AP4810GSM , CS150N03A8 , AP4813GYT-HF , AP4820AGYT-HF , AP4820GYT-HF , AP4835GM , AP4835GMT-HF , 2SK1940-01 , 2SK2552 , 2SK2645-01MR .
History: STF20N65M5 | PHX45NQ11T | TSF840MR | SSF3428 | SE2060 | AP60AN750IN | HMS200N04D
History: STF20N65M5 | PHX45NQ11T | TSF840MR | SSF3428 | SE2060 | AP60AN750IN | HMS200N04D



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