2SK2761-01MR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2761-01MR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 35 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 70 nS
Cossⓘ - Capacitancia de salida: 170 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.85 Ohm
Paquete / Cubierta: TO220F15
- Selección de transistores por parámetros
2SK2761-01MR Datasheet (PDF)
2sk2761-01mr.pdf

FUJI POWER MOSFET2SK2761-01MRN-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-220F15FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proof2.54ApplicationsSwitching regulators3. SourceUPS (Uninterruptible Power Supply)JEDECDC-DC converters SC-67EIAJMaximum ratings and characteristicAbsolute maximum
2sk2760-01.pdf

N-channel MOS-FET2SK2760-01FAP-IIS Series 600V 1,2 9A 60W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristi
2sk2767-01.pdf

N-channel MOS-FET2SK2767-01FAP-IIS Series 900V 5,5 3,5A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteris
Otros transistores... AP4820AGYT-HF , AP4820GYT-HF , AP4835GM , AP4835GMT-HF , 2SK1940-01 , 2SK2552 , 2SK2645-01MR , 2SK2654-01 , STP65NF06 , 2SK2765-01 , 2SK3496-01MR , 2SK3683-01MR , 2SK4075 , 2SK659 , AP4880BGM-HF , AP4880GM , AP4920GM-HF .
History: FQPF4N90C | WFY3N02 | APT904R2AN | 2SK2717 | SVF7N60CF | IRF7309IPBF | 2SK3210
History: FQPF4N90C | WFY3N02 | APT904R2AN | 2SK2717 | SVF7N60CF | IRF7309IPBF | 2SK3210



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
mje15033 | 2sc945 datasheet | a92 transistor | rfp50n06 | bd140 datasheet | tip2955 | tip35 | 2sk117