2SK2761-01MR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK2761-01MR
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 50 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 35 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 70 ns
Cossⓘ - Выходная емкость: 170 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.85 Ohm
Тип корпуса: TO220F15
Аналог (замена) для 2SK2761-01MR
2SK2761-01MR Datasheet (PDF)
2sk2761-01mr.pdf
FUJI POWER MOSFET2SK2761-01MRN-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-220F15FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proof2.54ApplicationsSwitching regulators3. SourceUPS (Uninterruptible Power Supply)JEDECDC-DC converters SC-67EIAJMaximum ratings and characteristicAbsolute maximum
2sk2760-01.pdf
N-channel MOS-FET2SK2760-01FAP-IIS Series 600V 1,2 9A 60W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristi
2sk2767-01.pdf
N-channel MOS-FET2SK2767-01FAP-IIS Series 900V 5,5 3,5A 80W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Repetitive Avalanche Rated> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteris
2sk2765-01.pdf
FUJI POWER MOSFET2SK2765-01N-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-3PFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsSwitching regulators3. SourceUPS (Uninterruptible Power Supply)JEDECDC-DC convertersEIAJ SC-65Maximum ratings and characteristicAbsolute maximum ratingsEqui
2sk2764-01r.pdf
FUJI POWER MOSFET2SK2764-01RN-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S Series5.50.30.30.215.53.23.2+0.3FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving power0.32.10.3 1.6Avalanche-proof+0.2 1.10.10.2 3.50.2 +0.20.25.45 5.45 0.6ApplicationsSwitching regulators1. Gate2. DrainUPS
2sk2769-01mr.pdf
FUJI POWER MOSFET2SK2769-01MRN-CHANNEL SILICON POWER MOSFETOutline DrawingsFAP-2S SeriesTO-220F15FeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proof2.54ApplicationsSwitching regulators3. SourceUPS (Uninterruptible Power Supply)JEDECDC-DC converters SC-67EIAJMaximum ratings and characteristicAbsolute maximum
2sk2765-01.pdf
isc N-Channel MOSFET Transistor 2SK2765-01FEATURESWith TO-3PN packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-
Другие MOSFET... AP4820AGYT-HF , AP4820GYT-HF , AP4835GM , AP4835GMT-HF , 2SK1940-01 , 2SK2552 , 2SK2645-01MR , 2SK2654-01 , IRF1405 , 2SK2765-01 , 2SK3496-01MR , 2SK3683-01MR , 2SK4075 , 2SK659 , AP4880BGM-HF , AP4880GM , AP4920GM-HF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918