AP4957AGM Todos los transistores

 

AP4957AGM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4957AGM
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.5 nS
   Cossⓘ - Capacitancia de salida: 190 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
   Paquete / Cubierta: SO8
 

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AP4957AGM Datasheet (PDF)

 ..1. Size:178K  ape
ap4957agm.pdf pdf_icon

AP4957AGM

AP4957AGMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS -30VD2D2 Simple Drive Requirement RDS(ON) 26mD1D1 Dual P MOSFET Package ID -7.4AG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized de

 0.1. Size:95K  ape
ap4957agm-hf.pdf pdf_icon

AP4957AGM

AP4957AGM-HFHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS -30VD2D2 Simple Drive Requirement RDS(ON) 26mD1D1 Dual P MOSFET Package ID -7.4AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best com

 7.1. Size:1931K  cn apm
ap4957a.pdf pdf_icon

AP4957AGM

AP4957A -30V P+P-Channel Enhancement Mode MOSFET Description The AP4957A uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-8.8A DS DR

 8.1. Size:72K  ape
ap4957gm.pdf pdf_icon

AP4957AGM

AP4957GMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS -30VD2D2 Simple Drive Requirement RDS(ON) 24mD1D1 Dual P MOSFET Package ID -7.7AG2S2G1SO-8S1DescriptionD2D1The Advanced Power MOSFETs from APEC provide thedesigner with the b

Otros transistores... AP4920GM-HF , AP4924GM , AP4933GM-HF , AP4936GM , AP4951GM , AP4951GM-HF , AP4953GM-HF , AP4955GM , 60N06 , AP4957GM , AP4959GM , AP4961GM , AP4963GEM-HF , AP9467AGH-HF , AP9467AGM-HF , AP9467AGMT-HF , AP9467GH-HF .

History: AP4959GM | AP30T10GS | AP2P053N

 

 
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