All MOSFET. AP4957AGM Datasheet

 

AP4957AGM Datasheet and Replacement


   Type Designator: AP4957AGM
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 7.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 190 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SO8
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AP4957AGM Datasheet (PDF)

 ..1. Size:178K  ape
ap4957agm.pdf pdf_icon

AP4957AGM

AP4957AGMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS -30VD2D2 Simple Drive Requirement RDS(ON) 26mD1D1 Dual P MOSFET Package ID -7.4AG2S2G1SO-8S1DescriptionD2D1Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized de

 0.1. Size:95K  ape
ap4957agm-hf.pdf pdf_icon

AP4957AGM

AP4957AGM-HFHalogen-Free ProductAdvanced Power DUAL P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Low On-Resistance BVDSS -30VD2D2 Simple Drive Requirement RDS(ON) 26mD1D1 Dual P MOSFET Package ID -7.4AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAdvanced Power MOSFETs from APEC provide theD2D1designer with the best com

 8.1. Size:72K  ape
ap4957gm.pdf pdf_icon

AP4957AGM

AP4957GMPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance BVDSS -30VD2D2 Simple Drive Requirement RDS(ON) 24mD1D1 Dual P MOSFET Package ID -7.7AG2S2G1SO-8S1DescriptionD2D1The Advanced Power MOSFETs from APEC provide thedesigner with the b

 9.1. Size:182K  ape
ap4951gm.pdf pdf_icon

AP4957AGM

AP4951GMRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -60VD2D2D1 Low Gate Charge RDS(ON) 96mD1 Fast Switching Performance ID -3.4AG2S2G1S1SO-8DescriptionD2D1Advanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized d

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AP4C205Y | AP4N2R6J | AP4533GEH-HF | AP4835GM

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