AP55T06GI-HF Todos los transistores

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AP55T06GI-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP55T06GI-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 31.3 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 29 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 25 nS

Conductancia de drenaje-sustrato (Cd): 160 pF

Resistencia drenaje-fuente RDS(on): 0.018 Ohm

Empaquetado / Estuche: TO220CFM

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AP55T06GI-HF Datasheet (PDF)

1.1. ap55t06gi-hf.pdf Size:59K _a-power

AP55T06GI-HF
AP55T06GI-HF

AP55T06GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 18m? Ў RoHS Compliant & Halogen-Free ID 29A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- G resistance an

2.1. ap55t06gs-hf.pdf Size:118K _a-power

AP55T06GI-HF
AP55T06GI-HF

AP55T06GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 60V Ў Lower On-resistance RDS(ON) 18m? Ў RoHS Compliant & Halogen-Free ID 32.4A G S Description AP55T06 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G resistance and fast sw

5.1. ap55t10gi-hf.pdf Size:117K _a-power

AP55T06GI-HF
AP55T06GI-HF

AP55T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 100V Ў Lower Gate Charge RDS(ON) 16.5m? Ў Fast Switching Characteristics ID 31.7A G Ў RoHS Compliant & Halogen-Free S Description AP55T10 series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos

5.2. ap55t10gh-hf.pdf Size:57K _a-power

AP55T06GI-HF
AP55T06GI-HF

AP55T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 100V Ў Lower Gate Charge RDS(ON) 16.5m? Ў Fast Switching Characteristic ID 56A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast switchin

5.3. ap55t10gp-hf.pdf Size:58K _a-power

AP55T06GI-HF
AP55T06GI-HF

AP55T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 100V Ў Lower Gate Charge RDS(ON) 16.5m? Ў Fast Switching Characteristic ID 56A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devi

5.4. ap55t10gs-hf.pdf Size:93K _a-power

AP55T06GI-HF
AP55T06GI-HF

AP55T10GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ў Simple Drive Requirement D BVDSS 100V Ў Lower Gate Charge RDS(ON) 18m? Ў Fast Switching Characteristic ID 54A G Ў RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized

Otros transistores... AP50T10GM-HF , AP50T10GP-HF , AP50T10GS-HF , AP5321GM-HF , AP5322GM-HF , AP5331GM-HF , AP5521GH-HF , AP5521GM-HF , RFP50N06 , AP55T06GS-HF , AP55T10GH-HF , AP55T10GI-HF , AP55T10GP-HF , AP55T10GS-HF , AP60N03GH , AP60N03GJ , AP60N03GP .

 


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Introduzca al menos 1 números o letras