AP55T06GI-HF. Аналоги и основные параметры

Наименование производителя: AP55T06GI-HF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 31.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 29 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 25 ns

Cossⓘ - Выходная емкость: 160 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.018 Ohm

Тип корпуса: TO220F

Аналог (замена) для AP55T06GI-HF

- подборⓘ MOSFET транзистора по параметрам

 

AP55T06GI-HF даташит

 ..1. Size:59K  ape
 ap55t06gi-hf.pdf pdf_icon

AP55T06GI-HF

AP55T06GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 29A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on- G resist

 5.1. Size:164K  ape
 ap55t06gi.pdf pdf_icon

AP55T06GI-HF

AP55T06GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 29A G S Description AP55T06 series are from Advanced Power innovated design and silicon process technology to achiev

 6.1. Size:118K  ape
 ap55t06gs-hf.pdf pdf_icon

AP55T06GI-HF

AP55T06GS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 60V Lower On-resistance RDS(ON) 18m RoHS Compliant & Halogen-Free ID 32.4A G S Description AP55T06 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- G resistance and

 9.1. Size:58K  ape
 ap55t10gp-hf.pdf pdf_icon

AP55T06GI-HF

AP55T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi

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