AP55T10GH-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP55T10GH-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 56 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 320 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0165 Ohm

Encapsulados: TO252

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AP55T10GH-HF datasheet

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 ap55t10gh-hf.pdf pdf_icon

AP55T10GH-HF

AP55T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast

 5.1. Size:193K  ape
 ap55t10gh.pdf pdf_icon

AP55T10GH-HF

AP55T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56A G RoHS Compliant & Halogen-Free S Description G AP55T10 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology

 5.2. Size:2205K  cn vbsemi
 ap55t10gh.pdf pdf_icon

AP55T10GH-HF

AP55T10GH www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0185 at VGS = 10 V 100 60 38 nC APPLICATIONS Primary Side Switch Isolated DC/DC Converter TO-252 D G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless other

 6.1. Size:58K  ape
 ap55t10gp-hf.pdf pdf_icon

AP55T10GH-HF

AP55T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi

MOSTRAR MÁS

Otros transistores... AP50T10GS-HF, AP5321GM-HF, AP5322GM-HF, AP5331GM-HF, AP5521GH-HF, AP5521GM-HF, AP55T06GI-HF, AP55T06GS-HF, IRFB4115, AP55T10GI-HF, AP55T10GP-HF, AP55T10GS-HF, AP60N03GH, AP60N03GJ, AP60N03GP, AP60N03GS, AP60T03GH-HF