All MOSFET. AP55T10GH-HF Datasheet

 

AP55T10GH-HF MOSFET. Datasheet pdf. Equivalent


   Type Designator: AP55T10GH-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 56 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm
   Package: TO252

 AP55T10GH-HF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP55T10GH-HF Datasheet (PDF)

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 ap55t10gh-hf.pdf

AP55T10GH-HF AP55T10GH-HF

AP55T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the GDSTO-252(H)designer with the best combination of fast

 5.1. Size:193K  ape
 ap55t10gh.pdf

AP55T10GH-HF AP55T10GH-HF

AP55T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56AG RoHS Compliant & Halogen-FreeSDescriptionGAP55T10 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology

 5.2. Size:2205K  cn vbsemi
 ap55t10gh.pdf

AP55T10GH-HF AP55T10GH-HF

AP55T10GHwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a Qg (Typ.) 100 % Rg and UIS Tested0.0185 at VGS = 10 V 100 60 38 nCAPPLICATIONS Primary Side Switch Isolated DC/DC ConverterTO-252D G S G D STop View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless other

 6.1. Size:58K  ape
 ap55t10gp-hf.pdf

AP55T10GH-HF AP55T10GH-HF

AP55T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedi

 6.2. Size:162K  ape
 ap55t10gi.pdf

AP55T10GH-HF AP55T10GH-HF

AP55T10GI-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristics ID 31.7AG RoHS Compliant & Halogen-FreeSDescriptionAP55T10 series are from Advanced Power inno

 6.3. Size:117K  ape
 ap55t10gi-hf.pdf

AP55T10GH-HF AP55T10GH-HF

AP55T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristics ID 31.7AG RoHS Compliant & Halogen-FreeSDescriptionAP55T10 series are from Advanced Power innovated design and siliconprocess technology to achieve the lo

 6.4. Size:144K  ape
 ap55t10gp.pdf

AP55T10GH-HF AP55T10GH-HF

AP55T10GP-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V RDS(ON) 16.5m Lower Gate Charge Fast Switching Characteristic ID 56AG RoHS Compliant & Halogen-FreeSDescriptionAP55T10 series are from Advanced Power innova

 6.5. Size:345K  ape
 ap55t10gr.pdf

AP55T10GH-HF AP55T10GH-HF

AP55T10GRHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 seriesare from Advanced Power innovated designAP55T10series arefrom Advanced Power innovated

 6.6. Size:93K  ape
 ap55t10gs-hf.pdf

AP55T10GH-HF AP55T10GH-HF

AP55T10GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 18m Fast Switching Characteristic ID 54AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDrug

Datasheet: AP50T10GS-HF , AP5321GM-HF , AP5322GM-HF , AP5331GM-HF , AP5521GH-HF , AP5521GM-HF , AP55T06GI-HF , AP55T06GS-HF , IRF630 , AP55T10GI-HF , AP55T10GP-HF , AP55T10GS-HF , AP60N03GH , AP60N03GJ , AP60N03GP , AP60N03GS , AP60T03GH-HF .

 

 
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