AP55T10GI-HF Todos los transistores

 

AP55T10GI-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP55T10GI-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36.7 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 31.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 27 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0165 Ohm
   Paquete / Cubierta: TO220F
 

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AP55T10GI-HF Datasheet (PDF)

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AP55T10GI-HF

AP55T10GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristics ID 31.7AG RoHS Compliant & Halogen-FreeSDescriptionAP55T10 series are from Advanced Power innovated design and siliconprocess technology to achieve the lo

 5.1. Size:162K  ape
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AP55T10GI-HF

AP55T10GI-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristics ID 31.7AG RoHS Compliant & Halogen-FreeSDescriptionAP55T10 series are from Advanced Power inno

 6.1. Size:58K  ape
 ap55t10gp-hf.pdf pdf_icon

AP55T10GI-HF

AP55T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedi

 6.2. Size:193K  ape
 ap55t10gh.pdf pdf_icon

AP55T10GI-HF

AP55T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56AG RoHS Compliant & Halogen-FreeSDescriptionGAP55T10 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology

MOSTRAR MÁS

Otros transistores... AP5321GM-HF , AP5322GM-HF , AP5331GM-HF , AP5521GH-HF , AP5521GM-HF , AP55T06GI-HF , AP55T06GS-HF , AP55T10GH-HF , IRFP250N , AP55T10GP-HF , AP55T10GS-HF , AP60N03GH , AP60N03GJ , AP60N03GP , AP60N03GS , AP60T03GH-HF , AP60T03GI .

History: SI4126DY | CM25N06 | AP4405GM | WM02DH08T | IXFB300N10P | 2SK1651 | PS05N20DA

 

 
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