AP55T10GI-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP55T10GI-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 36.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 31.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 320 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0165 Ohm

Encapsulados: TO220F

 Búsqueda de reemplazo de AP55T10GI-HF MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP55T10GI-HF datasheet

 ..1. Size:117K  ape
 ap55t10gi-hf.pdf pdf_icon

AP55T10GI-HF

AP55T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristics ID 31.7A G RoHS Compliant & Halogen-Free S Description AP55T10 series are from Advanced Power innovated design and silicon process technology to achieve the lo

 5.1. Size:162K  ape
 ap55t10gi.pdf pdf_icon

AP55T10GI-HF

AP55T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristics ID 31.7A G RoHS Compliant & Halogen-Free S Description AP55T10 series are from Advanced Power inno

 6.1. Size:58K  ape
 ap55t10gp-hf.pdf pdf_icon

AP55T10GI-HF

AP55T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi

 6.2. Size:193K  ape
 ap55t10gh.pdf pdf_icon

AP55T10GI-HF

AP55T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56A G RoHS Compliant & Halogen-Free S Description G AP55T10 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology

MOSTRAR MÁS

Otros transistores... AP5321GM-HF, AP5322GM-HF, AP5331GM-HF, AP5521GH-HF, AP5521GM-HF, AP55T06GI-HF, AP55T06GS-HF, AP55T10GH-HF, 2N7000, AP55T10GP-HF, AP55T10GS-HF, AP60N03GH, AP60N03GJ, AP60N03GP, AP60N03GS, AP60T03GH-HF, AP60T03GI