AP55T10GI-HF Specs and Replacement

Type Designator: AP55T10GI-HF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 31.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0165 Ohm

Package: TO220F

AP55T10GI-HF substitution

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AP55T10GI-HF datasheet

 ..1. Size:117K  ape
ap55t10gi-hf.pdf pdf_icon

AP55T10GI-HF

AP55T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristics ID 31.7A G RoHS Compliant & Halogen-Free S Description AP55T10 series are from Advanced Power innovated design and silicon process technology to achieve the lo... See More ⇒

 5.1. Size:162K  ape
ap55t10gi.pdf pdf_icon

AP55T10GI-HF

AP55T10GI-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristics ID 31.7A G RoHS Compliant & Halogen-Free S Description AP55T10 series are from Advanced Power inno... See More ⇒

 6.1. Size:58K  ape
ap55t10gp-hf.pdf pdf_icon

AP55T10GI-HF

AP55T10GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedi... See More ⇒

 6.2. Size:193K  ape
ap55t10gh.pdf pdf_icon

AP55T10GI-HF

AP55T10GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56A G RoHS Compliant & Halogen-Free S Description G AP55T10 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology ... See More ⇒

Detailed specifications: AP5321GM-HF, AP5322GM-HF, AP5331GM-HF, AP5521GH-HF, AP5521GM-HF, AP55T06GI-HF, AP55T06GS-HF, AP55T10GH-HF, 2N7000, AP55T10GP-HF, AP55T10GS-HF, AP60N03GH, AP60N03GJ, AP60N03GP, AP60N03GS, AP60T03GH-HF, AP60T03GI

Keywords - AP55T10GI-HF MOSFET specs

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