AP55T10GS-HF Todos los transistores

 

AP55T10GS-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP55T10GS-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 54 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: TO263
 

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AP55T10GS-HF Datasheet (PDF)

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 ap55t10gs-hf.pdf pdf_icon

AP55T10GS-HF

AP55T10GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 18m Fast Switching Characteristic ID 54AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDrug

 6.1. Size:58K  ape
 ap55t10gp-hf.pdf pdf_icon

AP55T10GS-HF

AP55T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedi

 6.2. Size:193K  ape
 ap55t10gh.pdf pdf_icon

AP55T10GS-HF

AP55T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56AG RoHS Compliant & Halogen-FreeSDescriptionGAP55T10 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology

 6.3. Size:162K  ape
 ap55t10gi.pdf pdf_icon

AP55T10GS-HF

AP55T10GI-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristics ID 31.7AG RoHS Compliant & Halogen-FreeSDescriptionAP55T10 series are from Advanced Power inno

MOSTRAR MÁS

Otros transistores... AP5331GM-HF , AP5521GH-HF , AP5521GM-HF , AP55T06GI-HF , AP55T06GS-HF , AP55T10GH-HF , AP55T10GI-HF , AP55T10GP-HF , 2SK3878 , AP60N03GH , AP60N03GJ , AP60N03GP , AP60N03GS , AP60T03GH-HF , AP60T03GI , AP60T03GJ-HF , AP60T03GP .

History: DH033N04E | 2SK2608 | TK14C65W5

 

 
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