All MOSFET. AP55T10GS-HF Datasheet

 

AP55T10GS-HF Datasheet and Replacement


   Type Designator: AP55T10GS-HF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 54 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 63 nC
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO263
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AP55T10GS-HF Datasheet (PDF)

 ..1. Size:93K  ape
 ap55t10gs-hf.pdf pdf_icon

AP55T10GS-HF

AP55T10GS-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 18m Fast Switching Characteristic ID 54AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDrug

 6.1. Size:58K  ape
 ap55t10gp-hf.pdf pdf_icon

AP55T10GS-HF

AP55T10GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedi

 6.2. Size:193K  ape
 ap55t10gh.pdf pdf_icon

AP55T10GS-HF

AP55T10GH-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristic ID 56AG RoHS Compliant & Halogen-FreeSDescriptionGAP55T10 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology

 6.3. Size:162K  ape
 ap55t10gi.pdf pdf_icon

AP55T10GS-HF

AP55T10GI-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 16.5m Fast Switching Characteristics ID 31.7AG RoHS Compliant & Halogen-FreeSDescriptionAP55T10 series are from Advanced Power inno

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Keywords - AP55T10GS-HF MOSFET datasheet

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