AP60T03GP Todos los transistores

 

AP60T03GP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP60T03GP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 57.5 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TO220
 

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AP60T03GP Datasheet (PDF)

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 ap60t03gp ap60t03gs.pdf pdf_icon

AP60T03GP

AP60T03GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Speed ID 45AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-e

 6.1. Size:186K  ape
 ap60t03gh.pdf pdf_icon

AP60T03GP

AP60T03GH-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Characteristic ID 45AG RoHS Compliant & Halogen-FreeSDescriptionAP60T03 series are from Advanced Power innovated d

 6.2. Size:98K  ape
 ap60t03gh j-hf.pdf pdf_icon

AP60T03GP

AP60T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Characteristic ID 45AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

 6.3. Size:121K  ape
 ap60t03gi.pdf pdf_icon

AP60T03GP

AP60T03GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Low Gate Charge RDS(ON) 12m Fast Switching ID 45AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,low on-resistance and cost-effective

MOSTRAR MÁS

Otros transistores... AP55T10GS-HF , AP60N03GH , AP60N03GJ , AP60N03GP , AP60N03GS , AP60T03GH-HF , AP60T03GI , AP60T03GJ-HF , K4145 , AP60T03GS , AP60T06GJ-HF , AP60T06GP-HF , AP60T10GI-HF , AP60T10GP , AP60T10GS , AP62T03GH , AP62T03GJ .

History: STL80N3LLH6 | BUK962R8-30B

 

 
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