AP60T06GJ-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP60T06GJ-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 46 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 42 nS
   Cossⓘ - Capacitancia de salida: 240 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TO251

Búsqueda de reemplazo de MOSFET AP60T06GJ-HF

AP60T06GJ-HF Datasheet (PDF)

..1. Size:93K ape
ap60t06gj-hf.pdf

AP60T06GJ-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 55V Lower On-resistance RDS(ON) 12m Fast Switching Characteristic ID 46AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDTO-251(J)designer with the best combination of fast swi

6.1. Size:93K ape
ap60t06gp-hf.pdf

AP60T06GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 55V Lower On-resistance RDS(ON) 12m Fast Switching Characteristic ID 46AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggediz

8.1. Size:186K ape
ap60t03gh.pdf

AP60T03GH-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Characteristic ID 45AG RoHS Compliant & Halogen-FreeSDescriptionAP60T03 series are from Advanced Power innovated d

8.2. Size:98K ape
ap60t03gh j-hf.pdf

AP60T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Characteristic ID 45AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

8.3. Size:121K ape
ap60t03gi.pdf

AP60T03GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Low Gate Charge RDS(ON) 12m Fast Switching ID 45AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,low on-resistance and cost-effective

8.4. Size:76K ape
ap60t03ah ap60t03aj.pdf

AP60T03AH/JAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETDSimple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching ID 45A GSDescriptionThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low

8.5. Size:200K ape
ap60t03gp ap60t03gs.pdf

AP60T03GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Speed ID 45AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-e

8.6. Size:98K ape
ap60t03gh j ap60t03gj ap60t03gh.pdf

AP60T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Characteristic ID 45AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design,

8.7. Size:77K ape
ap60t03as ap60t03ap.pdf

AP60T03AS/PAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement D BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching ID 45A GSDescriptionThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-

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