Справочник MOSFET. AP60T06GJ-HF

 

AP60T06GJ-HF MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP60T06GJ-HF
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 44.6 W
   Предельно допустимое напряжение сток-исток |Uds|: 55 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 5 V
   Максимально допустимый постоянный ток стока |Id|: 46 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 28 nC
   Время нарастания (tr): 42 ns
   Выходная емкость (Cd): 240 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.012 Ohm
   Тип корпуса: TO251

 Аналог (замена) для AP60T06GJ-HF

 

 

AP60T06GJ-HF Datasheet (PDF)

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 ap60t06gj-hf.pdf

AP60T06GJ-HF AP60T06GJ-HF

AP60T06GJ-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 55V Lower On-resistance RDS(ON) 12m Fast Switching Characteristic ID 46AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide theGDTO-251(J)designer with the best combination of fast swi

 6.1. Size:93K  ape
 ap60t06gp-hf.pdf

AP60T06GJ-HF AP60T06GJ-HF

AP60T06GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 55V Lower On-resistance RDS(ON) 12m Fast Switching Characteristic ID 46AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggediz

 8.1. Size:186K  ape
 ap60t03gh.pdf

AP60T06GJ-HF AP60T06GJ-HF

AP60T03GH-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Characteristic ID 45AG RoHS Compliant & Halogen-FreeSDescriptionAP60T03 series are from Advanced Power innovated d

 8.2. Size:98K  ape
 ap60t03gh j-hf.pdf

AP60T06GJ-HF AP60T06GJ-HF

AP60T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Characteristic ID 45AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized

 8.3. Size:121K  ape
 ap60t03gi.pdf

AP60T06GJ-HF AP60T06GJ-HF

AP60T03GIRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Low Gate Charge RDS(ON) 12m Fast Switching ID 45AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, ruggedized device design,low on-resistance and cost-effective

 8.4. Size:76K  ape
 ap60t03ah ap60t03aj.pdf

AP60T06GJ-HF AP60T06GJ-HF

AP60T03AH/JAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETDSimple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching ID 45A GSDescriptionThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low

 8.5. Size:200K  ape
 ap60t03gp ap60t03gs.pdf

AP60T06GJ-HF AP60T06GJ-HF

AP60T03GS/PRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Speed ID 45AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance and cost-e

 8.6. Size:98K  ape
 ap60t03gh j ap60t03gj ap60t03gh.pdf

AP60T06GJ-HF AP60T06GJ-HF

AP60T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching Characteristic ID 45AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device design,

 8.7. Size:77K  ape
 ap60t03as ap60t03ap.pdf

AP60T06GJ-HF AP60T06GJ-HF

AP60T03AS/PAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement D BVDSS 30V Low Gate Charge RDS(ON) 12m Fast Switching ID 45A GSDescriptionThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-

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