AP62T03GJ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP62T03GJ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 47 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 54 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 56 nS

Cossⓘ - Capacitancia de salida: 190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO251

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AP62T03GJ datasheet

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AP62T03GJ

AP62T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 12m Fast Switching Characteristic G ID 54A S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching, S TO-252(H) ruggedized device de

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AP62T03GJ

AP62T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 12m Fast Switching Characteristic G ID 54A S RoHS Compliant & Halogen-Free Description AP62T03 series are from Advanced Power innovated design and silicon G process technology to achieve the lowe

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ap62t02gj ap62t02gh.pdf pdf_icon

AP62T03GJ

AP62T02GH/J Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 12m Fast Switching Characteristic ID 48A G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-re

Otros transistores... AP60T03GP, AP60T03GS, AP60T06GJ-HF, AP60T06GP-HF, AP60T10GI-HF, AP60T10GP, AP60T10GS, AP62T03GH, SPP20N60C3, AP6618GM-HF, AP6677GH, AP6679BGH-HF, AP6679BGI-HF, AP6679BGM-HF, AP6679BGP-HF, AP6679GH-HF, AP6679GI-HF