AP62T03GJ MOSFET. Datasheet pdf. Equivalent
Type Designator: AP62T03GJ
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 54 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 11.5 nC
trⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 190 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO251
AP62T03GJ Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP62T03GJ Datasheet (PDF)
ap62t03gh j ap62t03gj.pdf
AP62T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 12m Fast Switching Characteristic G ID 54ASDescriptionAdvanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast switching,STO-252(H)ruggedized device de
ap62t03gh.pdf
AP62T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge D BVDSS 30V Simple Drive Requirement RDS(ON) 12m Fast Switching Characteristic G ID 54AS RoHS Compliant & Halogen-FreeDescriptionAP62T03 series are from Advanced Power innovated design and siliconGprocess technology to achieve the lowe
ap62t02gj ap62t02gh.pdf
AP62T02GH/JPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 12m Fast Switching Characteristic ID 48AGSDescriptionThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device design, low on-re
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 7N60L-TA3-T
History: 7N60L-TA3-T
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