AP6679GI-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6679GI-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 48 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 75 nS

Cossⓘ - Capacitancia de salida: 930 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO220F

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AP6679GI-HF datasheet

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 ap6679gi-hf.pdf pdf_icon

AP6679GI-HF

AP6679GI-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS -30V Single Drive Requirement RDS(ON) 9m Lower On-resistance ID -48A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-220CFM(I) ruggedized dev

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 ap6679gi.pdf pdf_icon

AP6679GI-HF

AP6679GI RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS -30V Single Drive Requirement RDS(ON) 9m Lower On-resistance ID -48A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D TO-220CFM(I) S ruggedized device design, low on-r

 7.1. Size:60K  ape
 ap6679gp-a ap6679gs-a.pdf pdf_icon

AP6679GI-HF

AP6679GS/P-A Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65A G RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-

 7.2. Size:198K  ape
 ap6679gs.pdf pdf_icon

AP6679GI-HF

AP6679GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device desi

MOSTRAR MÁS

Otros transistores... AP62T03GJ, AP6618GM-HF, AP6677GH, AP6679BGH-HF, AP6679BGI-HF, AP6679BGM-HF, AP6679BGP-HF, AP6679GH-HF, IRFB3607, AP6679GJ-HF, AP6679GM-HF, AP6679GP, AP6679GP-A-HF, AP6679GR, AP6679GS-A-HF, 2SK662, 2SK663