All MOSFET. AP6679GI-HF Datasheet

 

AP6679GI-HF Datasheet and Replacement


   Type Designator: AP6679GI-HF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 31.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 48 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 930 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO220F
 

 AP6679GI-HF substitution

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AP6679GI-HF Datasheet (PDF)

 ..1. Size:153K  ape
 ap6679gi-hf.pdf pdf_icon

AP6679GI-HF

AP6679GI-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS -30V Single Drive Requirement RDS(ON) 9m Lower On-resistance ID -48AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-220CFM(I)ruggedized dev

 6.1. Size:150K  ape
 ap6679gi.pdf pdf_icon

AP6679GI-HF

AP6679GIRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Low Gate Charge BVDSS -30V Single Drive Requirement RDS(ON) 9m Lower On-resistance ID -48AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DTO-220CFM(I)Sruggedized device design, low on-r

 7.1. Size:60K  ape
 ap6679gp-a ap6679gs-a.pdf pdf_icon

AP6679GI-HF

AP6679GS/P-APb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65AG RoHS CompliantSDescriptionThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-

 7.2. Size:198K  ape
 ap6679gs.pdf pdf_icon

AP6679GI-HF

AP6679GS/PRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-263(S)ruggedized device desi

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Datasheet: AP62T03GJ , AP6618GM-HF , AP6677GH , AP6679BGH-HF , AP6679BGI-HF , AP6679BGM-HF , AP6679BGP-HF , AP6679GH-HF , AON7506 , AP6679GJ-HF , AP6679GM-HF , AP6679GP , AP6679GP-A-HF , AP6679GR , AP6679GS-A-HF , 2SK662 , 2SK663 .

History: NVMTS0D6N04C

Keywords - AP6679GI-HF MOSFET datasheet

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