AP6679GJ-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6679GJ-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 89 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 960 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO251

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AP6679GJ-HF datasheet

 ..1. Size:216K  ape
 ap6679gh-hf ap6679gj-hf.pdf pdf_icon

AP6679GJ-HF

AP6679GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G RoHS Compliant S Description G D The TO-252 package is widely preferred for commercial-industrial S TO-252(H) surface mount applications and suit

 6.1. Size:215K  ape
 ap6679gh ap6679gj.pdf pdf_icon

AP6679GJ-HF

AP6679GH/J RoHS-compliat Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G S Description G D The TO-252 package is widely preferred for commercial-industrial S TO-252(H) surface mount applications and suited for low voltage appl

 7.1. Size:60K  ape
 ap6679gp-a ap6679gs-a.pdf pdf_icon

AP6679GJ-HF

AP6679GS/P-A Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65A G RoHS Compliant S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-

 7.2. Size:198K  ape
 ap6679gs.pdf pdf_icon

AP6679GJ-HF

AP6679GS/P RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75A G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-263(S) ruggedized device desi

MOSTRAR MÁS

Otros transistores... AP6618GM-HF, AP6677GH, AP6679BGH-HF, AP6679BGI-HF, AP6679BGM-HF, AP6679BGP-HF, AP6679GH-HF, AP6679GI-HF, AON6380, AP6679GM-HF, AP6679GP, AP6679GP-A-HF, AP6679GR, AP6679GS-A-HF, 2SK662, 2SK663, 2SK664