All MOSFET. AP6679GJ-HF Datasheet

 

AP6679GJ-HF Datasheet and Replacement


   Type Designator: AP6679GJ-HF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 89 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 960 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO251
 

 AP6679GJ-HF substitution

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AP6679GJ-HF Datasheet (PDF)

 ..1. Size:216K  ape
 ap6679gh-hf ap6679gj-hf.pdf pdf_icon

AP6679GJ-HF

AP6679GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AG RoHS CompliantSDescriptionGDThe TO-252 package is widely preferred for commercial-industrialSTO-252(H)surface mount applications and suit

 6.1. Size:215K  ape
 ap6679gh ap6679gj.pdf pdf_icon

AP6679GJ-HF

AP6679GH/JRoHS-compliat ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AGSDescriptionGDThe TO-252 package is widely preferred for commercial-industrial STO-252(H)surface mount applications and suited for low voltage appl

 7.1. Size:60K  ape
 ap6679gp-a ap6679gs-a.pdf pdf_icon

AP6679GJ-HF

AP6679GS/P-APb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65AG RoHS CompliantSDescriptionThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-

 7.2. Size:198K  ape
 ap6679gs.pdf pdf_icon

AP6679GJ-HF

AP6679GS/PRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-263(S)ruggedized device desi

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Datasheet: AP6618GM-HF , AP6677GH , AP6679BGH-HF , AP6679BGI-HF , AP6679BGM-HF , AP6679BGP-HF , AP6679GH-HF , AP6679GI-HF , IRLZ44N , AP6679GM-HF , AP6679GP , AP6679GP-A-HF , AP6679GR , AP6679GS-A-HF , 2SK662 , 2SK663 , 2SK664 .

Keywords - AP6679GJ-HF MOSFET datasheet

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