AP6679GP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6679GP
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 89 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 960 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de AP6679GP MOSFET
AP6679GP Datasheet (PDF)
ap6679gp.pdf

AP6679GS/PRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-263(S)ruggedized device desi
ap6679gp-a ap6679gs-a.pdf

AP6679GS/P-APb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -40V Simple Drive Requirement RDS(ON) 13.5m Fast Switching Characteristic ID -65AG RoHS CompliantSDescriptionThe Advanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-
ap6679gp-hf ap6679gs-hf.pdf

AP6679GS/P-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-263(S)r
ap6679gs.pdf

AP6679GS/PRoHS-compliant ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID -75AGSDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,DS TO-263(S)ruggedized device desi
Otros transistores... AP6679BGH-HF , AP6679BGI-HF , AP6679BGM-HF , AP6679BGP-HF , AP6679GH-HF , AP6679GI-HF , AP6679GJ-HF , AP6679GM-HF , IRLB4132 , AP6679GP-A-HF , AP6679GR , AP6679GS-A-HF , 2SK662 , 2SK663 , 2SK664 , 2SK665 , 2SK669 .
History: RJK0396DPA | APQ110SN5EA | CXDM3069N | 36N06 | BRCS250N10SDP | AUIRFR2307ZTR | 2SK2074
History: RJK0396DPA | APQ110SN5EA | CXDM3069N | 36N06 | BRCS250N10SDP | AUIRFR2307ZTR | 2SK2074



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