2SK663 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Silicon Junction FETs (Small Signal) 2SK6632SK663Silicon N-Channel JunctionUnit : mmFor low-frequency amplification2.1 0.1For switching0.425 1.25 0.1 0.425 Features1 High mutual conductance gm Low noise type3 Downsizing of sets by S-mini type package and automatic insertion2by taping/magazine packing are available. Absolute Maximum Ratings (Ta = 25C)0.2

Ordering number:EN2563CN-Channel Enhancement Silicon MOSFET2SK669Very High-Speed Switch,Analog Switch ApplicationsApplications Package Dimensions Analog switches, low-pass filters, Ultrahigh-speedunit:mmswitches.2040A[2SK669]2.24.0Features Large yfs . Enhancemet type.0.40.5 Small ON resistance.0.40.41 2 31 : Drain1.3 1.32 : Sour

DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK660N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORFOR IMPEDANCE CONVERTER OF ECMDESCRIPTION The 2SK660 is suitable for converter of ECM.FEATURES Compact package High forward transfer admittance| yfs | = 1200 S TYP. (VDS = 5 V, ID = 0 A) Low capacitanceCiss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz) Include

Silicon MOS FETs (Small Signal) 2SK6642SK664Silicon N-Channel MOSUnit : mmFor switching2.1 0.10.425 1.25 0.1 0.425 Features High-speed switching1 Downsizing of sets by S-mini type package and automatic insertionby taping/magazine packing are available.32 Absolute Maximum Ratings (Ta = 25C)0.2 0.1SymbolParameter Rating UnitVDSDrain-Source breakdown v

Silicon Junction FETs (Small Signal) 2SK6622SK662Silicon N-Channel JunctionUnit : mmFor low-frequency amplification2.1 0.10.425 1.25 0.1 0.425 Features High mutual conductance gm1 Low noise type Downsizing of sets by S-mini type package and automatic insertion3by taping/magazine packing are available.2 Absolute Maximum Ratings (Ta = 25C)0.2 0.1Parameter

Silicon MOS FETs (Small Signal) 2SK6652SK665Silicon N-Channel MOSUnit : mmFor switching2.1 0.10.425 1.25 0.1 0.425 Features High-speed switching1 Small drive current owing to high input impedance Extremely high electrostatic destruction voltage32 Absolute Maximum Ratings (Ta = 25C)0.2 0.1Parameter Symbol Rating UnitDrain-Source voltage VDS 20 V1 : Gat

isc N-Channel MOSFET Transistor 2SK667FEATURESDrain Current I =8A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay dr