2SK663 - описание и поиск аналогов

Silicon Junction FETs (Small Signal) 2SK663 2SK663 Silicon N-Channel Junction Unit mm For low-frequency amplification 2.1 0.1 For switching 0.425 1.25 0.1 0.425 Features 1 High mutual conductance gm Low noise type 3 Downsizing of sets by S-mini type package and automatic insertion 2 by taping/magazine packing are available. Absolute Maximum Ratings (Ta = 25 C) 0.2

Ordering number EN2563C N-Channel Enhancement Silicon MOSFET 2SK669 Very High-Speed Switch, Analog Switch Applications Applications Package Dimensions Analog switches, low-pass filters, Ultrahigh-speed unit mm switches. 2040A [2SK669] 2.2 4.0 Features Large yfs . Enhancemet type. 0.4 0.5 Small ON resistance. 0.4 0.4 1 2 3 1 Drain 1.3 1.3 2 Sour

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK660 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK660 is suitable for converter of ECM. FEATURES Compact package High forward transfer admittance yfs = 1200 S TYP. (VDS = 5 V, ID = 0 A) Low capacitance Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz) Include

Silicon MOS FETs (Small Signal) 2SK664 2SK664 Silicon N-Channel MOS Unit mm For switching 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching 1 Downsizing of sets by S-mini type package and automatic insertion by taping/magazine packing are available. 3 2 Absolute Maximum Ratings (Ta = 25 C) 0.2 0.1 Symbol Parameter Rating Unit VDS Drain-Source breakdown v

Silicon Junction FETs (Small Signal) 2SK662 2SK662 Silicon N-Channel Junction Unit mm For low-frequency amplification 2.1 0.1 0.425 1.25 0.1 0.425 Features High mutual conductance gm 1 Low noise type Downsizing of sets by S-mini type package and automatic insertion 3 by taping/magazine packing are available. 2 Absolute Maximum Ratings (Ta = 25 C) 0.2 0.1 Parameter

Silicon MOS FETs (Small Signal) 2SK665 2SK665 Silicon N-Channel MOS Unit mm For switching 2.1 0.1 0.425 1.25 0.1 0.425 Features High-speed switching 1 Small drive current owing to high input impedance Extremely high electrostatic destruction voltage 3 2 Absolute Maximum Ratings (Ta = 25 C) 0.2 0.1 Parameter Symbol Rating Unit Drain-Source voltage VDS 20 V 1 Gat

isc N-Channel MOSFET Transistor 2SK667 FEATURES Drain Current I =8A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay dr