2SK720A
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK720A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 250
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 20
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 45
nS
Cossⓘ - Capacitancia
de salida: 680
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18
Ohm
Paquete / Cubierta:
TO-3P
- Selección de transistores por parámetros
2SK720A
Datasheet (PDF)
9.4. Size:236K inchange semiconductor
2sk727.pdf 
isc N-Channel MOSFET Transistor 2SK727DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
9.5. Size:236K inchange semiconductor
2sk726.pdf
isc N-Channel MOSFET Transistor 2SK726DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
9.6. Size:236K inchange semiconductor
2sk723.pdf
isc N-Channel MOSFET Transistor 2SK723DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V =500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
9.7. Size:236K inchange semiconductor
2sk724.pdf
isc N-Channel MOSFET Transistor 2SK724DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor
9.8. Size:236K inchange semiconductor
2sk725.pdf
isc N-Channel MOSFET Transistor 2SK725DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor
Otros transistores... AP6679GS-A-HF
, 2SK662
, 2SK663
, 2SK664
, 2SK665
, 2SK669
, 2SK704
, 2SK709
, STF13NM60N
, 2SK727-01
, 2SK787
, AP6680AGM
, AP6680BGM-HF
, AP6680BGYT-HF
, AP6680CGYT-HF
, AP6680SGYT-HF
, AP6683GYT-HF
.
History: IXTP50N28T
| 3SK249
