2SK720A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK720A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 120 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 45 nS
Cossⓘ - Capacitancia de salida: 680 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
Encapsulados: TO-3P
Búsqueda de reemplazo de 2SK720A MOSFET
- Selecciónⓘ de transistores por parámetros
2SK720A datasheet
9.4. Size:236K inchange semiconductor
2sk727.pdf 
isc N-Channel MOSFET Transistor 2SK727 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor c
9.5. Size:236K inchange semiconductor
2sk726.pdf
isc N-Channel MOSFET Transistor 2SK726 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor c
9.6. Size:236K inchange semiconductor
2sk723.pdf
isc N-Channel MOSFET Transistor 2SK723 DESCRIPTION Drain Current I =7A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor c
9.7. Size:236K inchange semiconductor
2sk724.pdf
isc N-Channel MOSFET Transistor 2SK724 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor
9.8. Size:236K inchange semiconductor
2sk725.pdf
isc N-Channel MOSFET Transistor 2SK725 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor
Otros transistores... AP6679GS-A-HF, 2SK662, 2SK663, 2SK664, 2SK665, 2SK669, 2SK704, 2SK709, 2SK3568, 2SK727-01, 2SK787, AP6680AGM, AP6680BGM-HF, AP6680BGYT-HF, AP6680CGYT-HF, AP6680SGYT-HF, AP6683GYT-HF
