2SK720A
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK720A
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 120
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id| ⓘ - Максимально
допустимый постоянный ток стока: 20
A
Tj ⓘ - Максимальная температура канала: 150
°C
tr ⓘ -
Время нарастания: 45
ns
Cossⓘ - Выходная емкость: 680
pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.18
Ohm
Тип корпуса:
TO-3P
Аналог (замена) для 2SK720A
-
подбор ⓘ MOSFET транзистора по параметрам
2SK720A
Datasheet (PDF)
9.4. Size:236K inchange semiconductor
2sk727.pdf 
isc N-Channel MOSFET Transistor 2SK727DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
9.5. Size:236K inchange semiconductor
2sk726.pdf 
isc N-Channel MOSFET Transistor 2SK726DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
9.6. Size:236K inchange semiconductor
2sk723.pdf 
isc N-Channel MOSFET Transistor 2SK723DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V =500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
9.7. Size:236K inchange semiconductor
2sk724.pdf 
isc N-Channel MOSFET Transistor 2SK724DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor
9.8. Size:236K inchange semiconductor
2sk725.pdf 
isc N-Channel MOSFET Transistor 2SK725DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor
Другие MOSFET... AP6679GS-A-HF
, 2SK662
, 2SK663
, 2SK664
, 2SK665
, 2SK669
, 2SK704
, 2SK709
, 5N65
, 2SK727-01
, 2SK787
, AP6680AGM
, AP6680BGM-HF
, AP6680BGYT-HF
, AP6680CGYT-HF
, AP6680SGYT-HF
, AP6683GYT-HF
.
History: PH955L
| ZXMP6A17GTA
| HY4504W
| IXFV18N90PS
| IRF7478QPBF
| IRH9230
| 2SK4067I
