2SK720A
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: 2SK720A
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 120
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 250
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 20
A
Tjⓘ - Максимальная температура канала: 150
°C
trⓘ -
Время нарастания: 45
ns
Cossⓘ - Выходная емкость: 680
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.18
Ohm
Тип корпуса:
TO-3P
- подбор MOSFET транзистора по параметрам
2SK720A
Datasheet (PDF)
9.4. Size:236K inchange semiconductor
2sk727.pdf 
isc N-Channel MOSFET Transistor 2SK727DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
9.5. Size:236K inchange semiconductor
2sk726.pdf 
isc N-Channel MOSFET Transistor 2SK726DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
9.6. Size:236K inchange semiconductor
2sk723.pdf 
isc N-Channel MOSFET Transistor 2SK723DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V =500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor c
9.7. Size:236K inchange semiconductor
2sk724.pdf 
isc N-Channel MOSFET Transistor 2SK724DESCRIPTIONDrain Current I =10A@ T =25D CDrain Source Voltage-: V =500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor
9.8. Size:236K inchange semiconductor
2sk725.pdf 
isc N-Channel MOSFET Transistor 2SK725DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =500V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,such as off-line switching power supplies , UPS,AC and DCmotor
Другие MOSFET... IRFP360LC
, IRFP3710
, IRFP430
, IRFP431
, IRFP432
, IRFP433
, IRFP440
, IRFP440A
, IRFP250
, IRFP442
, IRFP443
, IRFP448
, IRFP450
, IRFP450A
, IRFP450FI
, IRFP450LC
, IRFP451
.
History: IRFS542
| CSD17578Q5A
