2SK720A. Аналоги и основные параметры
Наименование производителя: 2SK720A
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 120 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 250 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 20 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 45 ns
Cossⓘ - Выходная емкость: 680 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
Тип корпуса: TO-3P
Аналог (замена) для 2SK720A
- подборⓘ MOSFET транзистора по параметрам
2SK720A даташит
9.4. Size:236K inchange semiconductor
2sk727.pdf 

isc N-Channel MOSFET Transistor 2SK727 DESCRIPTION Drain Current I =5A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor c
9.5. Size:236K inchange semiconductor
2sk726.pdf 

isc N-Channel MOSFET Transistor 2SK726 DESCRIPTION Drain Current I =3A@ T =25 D C Drain Source Voltage- V =900V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor c
9.6. Size:236K inchange semiconductor
2sk723.pdf 

isc N-Channel MOSFET Transistor 2SK723 DESCRIPTION Drain Current I =7A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor c
9.7. Size:236K inchange semiconductor
2sk724.pdf 

isc N-Channel MOSFET Transistor 2SK724 DESCRIPTION Drain Current I =10A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor
9.8. Size:236K inchange semiconductor
2sk725.pdf 

isc N-Channel MOSFET Transistor 2SK725 DESCRIPTION Drain Current I =15A@ T =25 D C Drain Source Voltage- V =500V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor
Другие MOSFET... AP6679GS-A-HF
, 2SK662
, 2SK663
, 2SK664
, 2SK665
, 2SK669
, 2SK704
, 2SK709
, 2SK3568
, 2SK727-01
, 2SK787
, AP6680AGM
, AP6680BGM-HF
, AP6680BGYT-HF
, AP6680CGYT-HF
, AP6680SGYT-HF
, AP6683GYT-HF
.
History: FS3UM-9
| 2SK664
| 2SJ349
| FS10KM-6
| FS16SM-6
| 2SK787