AP6680AGM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6680AGM

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 220 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: SO-8

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AP6680AGM datasheet

 ..1. Size:196K  ape
 ap6680agm.pdf pdf_icon

AP6680AGM

AP6680AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 12A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, G ruggedized device design, ultra

 0.1. Size:94K  ape
 ap6680agm-hf.pdf pdf_icon

AP6680AGM

AP6680AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 12A G RoHS Compliant & Halogen-Free S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching,

 8.1. Size:93K  ape
 ap6680bgm-hf.pdf pdf_icon

AP6680AGM

AP6680BGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 9m D Fast Switching Characteristic ID 13.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of f

 8.2. Size:59K  ape
 ap6680cgyt-hf.pdf pdf_icon

AP6680AGM

AP6680CGYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 15A G S D D Description D AP6680C series are from Advanced Power innovated design and silicon D process technology to achieve the lowest possible on-re

MOSTRAR MÁS

Otros transistores... 2SK664, 2SK665, 2SK669, 2SK704, 2SK709, 2SK720A, 2SK727-01, 2SK787, RFP50N06, AP6680BGM-HF, AP6680BGYT-HF, AP6680CGYT-HF, AP6680SGYT-HF, AP6683GYT-HF, AP6800GEO, AP6900GSM, AP6901AGSM-HF