AP6680AGM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: AP6680AGM
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.5 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 12 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 17 nC
Время нарастания (tr): 6 ns
Выходная емкость (Cd): 220 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.011 Ohm
Тип корпуса: SO-8
AP6680AGM Datasheet (PDF)
ap6680agm.pdf
AP6680AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 12AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the Ddesigner with the best combination of fast switching,Gruggedized device design, ultra
ap6680agm-hf.pdf
AP6680AGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 12AG RoHS Compliant & Halogen-FreeSDDDescriptionDAdvanced Power MOSFETs from APEC provide the Ddesigner with the best combination of fast switching,
ap6680bgm-hf.pdf
AP6680BGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 9mD Fast Switching Characteristic ID 13.3AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of f
ap6680cgyt-hf.pdf
AP6680CGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 15AGSDDDescriptionDAP6680C series are from Advanced Power innovated design and siliconDprocess technology to achieve the lowest possible on-re
ap6680sgyt-hf.pdf
AP6680SGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL MOSFET WITH SCHOTTKYElectronics Corp. DIODED Simple Drive Requirement BVDSS 30V Small Size & Lower Profile RDS(ON) 9mSchottky Diode RoHS Compliant & Halogen-Free ID 15AGSDDDescriptionDAP6680S series are from Advanced Power innovated design and siliconDprocess technology to achieve the lowest p
ap6680bgyt-hf.pdf
AP6680BGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 16AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching,ruggedized device desi
ap6680gm.pdf
AP6680GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLowOn-Resistance BVDSS 30V Low On-ResistanceLowOn-Resistance Low On-ResistanceDDHighVgsMaxRatingVoltage D RDS(ON) 11m High Vgs Max Rating VoltageHighVgsMaxRatingVoltage High Vgs Max Rating VoltageDSurfaceMountPackage ID 11.5A Surfa
Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
