AP6680SGYT-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6680SGYT-HF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.13 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 225 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: PMPAK3X3
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AP6680SGYT-HF Datasheet (PDF)
ap6680sgyt-hf.pdf

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ap6680agm.pdf

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ap6680cgyt-hf.pdf

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Otros transistores... 2SK709 , 2SK720A , 2SK727-01 , 2SK787 , AP6680AGM , AP6680BGM-HF , AP6680BGYT-HF , AP6680CGYT-HF , 2N60 , AP6683GYT-HF , AP6800GEO , AP6900GSM , AP6901AGSM-HF , AP6901GSM-HF , 2SK800 , 2SK805 , 2SK806 .
History: STL7N80K5 | QM6020P | EMB12P03V | FDPF7N50 | SFF130 | PTP10N40B | AON7548
History: STL7N80K5 | QM6020P | EMB12P03V | FDPF7N50 | SFF130 | PTP10N40B | AON7548



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