AP6680SGYT-HF Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP6680SGYT-HF
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 3.13 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 15 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 6 ns
Cossⓘ - Выходная емкость: 225 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm
Тип корпуса: PMPAK3X3
Аналог (замена) для AP6680SGYT-HF
AP6680SGYT-HF Datasheet (PDF)
ap6680sgyt-hf.pdf

AP6680SGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL MOSFET WITH SCHOTTKYElectronics Corp. DIODED Simple Drive Requirement BVDSS 30V Small Size & Lower Profile RDS(ON) 9mSchottky Diode RoHS Compliant & Halogen-Free ID 15AGSDDDescriptionDAP6680S series are from Advanced Power innovated design and siliconDprocess technology to achieve the lowest p
ap6680bgm-hf.pdf

AP6680BGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 9mD Fast Switching Characteristic ID 13.3AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of f
ap6680agm.pdf

AP6680AGMRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 12AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide the Ddesigner with the best combination of fast switching,Gruggedized device design, ultra
ap6680cgyt-hf.pdf

AP6680CGYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 15AGSDDDescriptionDAP6680C series are from Advanced Power innovated design and siliconDprocess technology to achieve the lowest possible on-re
Другие MOSFET... 2SK709 , 2SK720A , 2SK727-01 , 2SK787 , AP6680AGM , AP6680BGM-HF , AP6680BGYT-HF , AP6680CGYT-HF , 2N60 , AP6683GYT-HF , AP6800GEO , AP6900GSM , AP6901AGSM-HF , AP6901GSM-HF , 2SK800 , 2SK805 , 2SK806 .
History: DMN2990UFA | DH160P03V | FQPF30N06 | STP60NE06-16 | AP65SL099DI
History: DMN2990UFA | DH160P03V | FQPF30N06 | STP60NE06-16 | AP65SL099DI



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