AP6683GYT-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP6683GYT-HF

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.13 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 430 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: PMPAK3X3

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AP6683GYT-HF datasheet

 ..1. Size:93K  ape
 ap6683gyt-hf.pdf pdf_icon

AP6683GYT-HF

AP6683GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -30V Small Size & Lower Profile RDS(ON) 10m RoHS Compliant & Halogen-Free ID -14.5A G S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedized device desi

 9.1. Size:93K  ape
 ap6680bgm-hf.pdf pdf_icon

AP6683GYT-HF

AP6680BGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 9m D Fast Switching Characteristic ID 13.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of f

 9.2. Size:196K  ape
 ap6680agm.pdf pdf_icon

AP6683GYT-HF

AP6680AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 11m Fast Switching Characteristic ID 12A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, G ruggedized device design, ultra

 9.3. Size:59K  ape
 ap6680cgyt-hf.pdf pdf_icon

AP6683GYT-HF

AP6680CGYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 15A G S D D Description D AP6680C series are from Advanced Power innovated design and silicon D process technology to achieve the lowest possible on-re

MOSTRAR MÁS

Otros transistores... 2SK720A, 2SK727-01, 2SK787, AP6680AGM, AP6680BGM-HF, AP6680BGYT-HF, AP6680CGYT-HF, AP6680SGYT-HF, IRF520, AP6800GEO, AP6900GSM, AP6901AGSM-HF, AP6901GSM-HF, 2SK800, 2SK805, 2SK806, 2SK808