2SK800 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK800
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 120 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 450 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 610 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.32 Ohm
   Paquete / Cubierta: TO-3P

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2SK800 Datasheet (PDF)

..1. Size:146K nec
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"2SK807""2SK807"

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LESHAN RADIO COMPANY, LTD.Small Signal MOSFET310 mAmps, 60 VoltsL2SK801LT1GNChannel SOT233 Pb-Free Package is Available.12CASE 318, STYLE 21MAXIMUM RATINGSSOT 23 (TO236AB)Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 Vdc 310 mAMPSDrain Current 60 VOLTS Continuous TC = 25C (Note 1.) ID 3

9.9. Size:197K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK805DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXIMUM

9.10. Size:197K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK809ADESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

9.11. Size:197K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK807DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

9.12. Size:201K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK808ADESCRIPTIONDrain Current I =1A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

9.13. Size:201K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK806DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

9.14. Size:199K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK803DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =160V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 160 VDSS GSV Gate-Source

9.15. Size:201K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK808DESCRIPTIONDrain Current I =1A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

9.16. Size:195K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK804DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 150

9.17. Size:197K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK809DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

Otros transistores... AP6680BGYT-HF , AP6680CGYT-HF , AP6680SGYT-HF , AP6683GYT-HF , AP6800GEO , AP6900GSM , AP6901AGSM-HF , AP6901GSM-HF , K2611 , 2SK805 , 2SK806 , 2SK808 , 2SK808A , 2SK809 , 2SK809A , 2SK812 , 2SK817 .