2SK800 - параметры транзистора MOSFET, его аналоги, datasheet

2SK800 Даташит. Основные параметры и характеристики. Поиск аналогов

   Наименование прибора: 2SK800
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 120 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 450 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 18 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 40 ns
   Cossⓘ - Выходная емкость: 610 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.32 Ohm
   Тип корпуса: TO-3P

Аналог (замена) для 2SK800

- подбор ⓘ MOSFET транзистора по параметрам

2SK800 Datasheet (PDF)

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9.3. Size:141K panasonic
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"2SK807""2SK807"

9.4. Size:61K panasonic
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9.5. Size:66K panasonic
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9.8. Size:183K lrc
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LESHAN RADIO COMPANY, LTD.Small Signal MOSFET310 mAmps, 60 VoltsL2SK801LT1GNChannel SOT233 Pb-Free Package is Available.12CASE 318, STYLE 21MAXIMUM RATINGSSOT 23 (TO236AB)Rating Symbol Value UnitDrainSource Voltage VDSS 60 VdcDrainGate Voltage (RGS = 1.0 M) VDGR 60 Vdc 310 mAMPSDrain Current 60 VOLTS Continuous TC = 25C (Note 1.) ID 3

9.9. Size:197K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK805DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE MAXIMUM

9.10. Size:197K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK809ADESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

9.11. Size:197K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK807DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

9.12. Size:201K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK808ADESCRIPTIONDrain Current I =1A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

9.13. Size:201K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK806DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

9.14. Size:199K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK803DESCRIPTIONDrain Current I =8A@ T =25D CDrain Source Voltage-: V =160V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 160 VDSS GSV Gate-Source

9.15. Size:201K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK808DESCRIPTIONDrain Current I =1A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

9.16. Size:195K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK804DESCRIPTIONDrain Current I =20A@ T =25D CDrain Source Voltage-: V =150V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 150

9.17. Size:197K inchange semiconductor
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isc N-Channel MOSFET Transistor 2SK809DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay

Другие MOSFET... AP6680BGYT-HF , AP6680CGYT-HF , AP6680SGYT-HF , AP6683GYT-HF , AP6800GEO , AP6900GSM , AP6901AGSM-HF , AP6901GSM-HF , K2611 , 2SK805 , 2SK806 , 2SK808 , 2SK808A , 2SK809 , 2SK809A , 2SK812 , 2SK817 .