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2SK882 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK882

Código: TY

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.1 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 5 V

Corriente continua de drenaje (Id): 0.03 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Empaquetado / Estuche: SC-70

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2SK882 Datasheet (PDF)

1.1. 2sk882.pdf Size:174K _toshiba

2SK882
2SK882

2SK882 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK882 FM Tuner, VHF RF Amplifier Applications Unit: mm • Low reverse transfer capacitance: Crss = 0.025 pF (typ.) • Low noise figure: NF = 1.7dB (typ.) • High power gain: G = 28dB (typ.) ps • Recommend operation voltage: 5~15 V Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit

5.1. 2sk889.pdf Size:60K _update

2SK882
2SK882



5.2. 2sk888.pdf Size:110K _update

2SK882
2SK882

( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com

 5.3. 2sk880.pdf Size:294K _toshiba

2SK882
2SK882

2SK880 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK880 Audio Frequency Low Noise Amplifier Applications Unit: mm • High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0 • High breakdown voltage: VGDS = -50 V • Low noise: NF = 1.0dB (typ.) at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k? • High input impedance: IGSS = -1 nA (max) at VGS = -30 V

5.4. 2sk881.pdf Size:649K _toshiba

2SK882
2SK882

2SK881 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK881 FM Tuner Applications Unit: mm VHF Band Amplifier Applications • Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) • High forward transfer admittance: |Yfs| = 9 mS (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage VGDO -18 V Gate current IG 10 mA

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