AP6924GEY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6924GEY
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
|Id|ⓘ - Corriente continua de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 125 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 53 nS
Cossⓘ - Capacitancia de salida: 17 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: SOT-26
Búsqueda de reemplazo de AP6924GEY MOSFET
AP6924GEY Datasheet (PDF)
ap6924gey.pdf

AP6924GEYRoHS-compliant ProductAdvanced Power N-CHANNEL MOSFET WITH SCHOTTKYElectronics Corp. DIODEK Low On-Resistance BVDSS 20VSD Fast Switching Characteristic RDS(ON) 600m Included Schottky Diode ID 1AAASOT-26GDescriptionThe Advanced Power MOSFETs from APEC provide theDKdesigner with the best combination of fast switching, ruggedizeddevice desi
ap6926gmt.pdf

AP6926GMT-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD1 Simple Drive Requirement CH-1 BVDSS 40V Easy for Synchronous Buck RDS(ON) 40mG1Converter Application ID 15AD2/S1 RoHS Compliant & Halogen-Free CH-2 BVDSS 40VRDS(ON) 20mG2Description ID 24AS2Advanced Power MOSFETs from APEC provideG2G2 S2 S
ap6925gy.pdf

AP6925GYRoHS-compliant ProductAdvanced Power P-CHANNEL MOSFET WITH SCHOTTKYElectronics Corp. DIODED Low Gate Charge BVDSS -16VNCK Surface Mount Package RDS(ON) 150mG RoHS Compliant ID - 1.6ASSOT-26 AADDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,ruggedized device design, ultra lower
ap6922gmt-hf.pdf

AP6922GMT-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL MOSFET WITHElectronics Corp. SCHOTTKY DIODED1 Simple Drive Requirement CH-1 BVDSS 30V Easy for Synchronous Buck RDS(ON) 8.5mG1Converter Application ID 48AD2/S1 RoHS Compliant & Halogen-Free CH-2 BVDSS 30VRDS(ON) 3.8mG2Description ID 87AS2Advanced Power MOSFETs from APEC provideG2G2 S2 S2
Otros transistores... AP6903GH-HF , AP6904GH-HF , AP6906GH-HF , AP6910GSM-HF , AP6920GMT-HF , AP6921GMT-HF , AP6922GMT-HF , AP6923GMT-HF , IRF840 , AP6925GY , AP6928GMT-HF , AP6930GMT-HF , AP6941GMT-HF , AP6942GMT-HF , AP6950GYT-HF , AP6970GN2-HF , AP6980GN2-HF .
History: NTMFS0D9N03CGT1G | IRF5Y540CM | IRF2903ZL | UK3018 | IRFU3504Z | AUIRFIZ44N
History: NTMFS0D9N03CGT1G | IRF5Y540CM | IRF2903ZL | UK3018 | IRFU3504Z | AUIRFIZ44N



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
2n4403 transistor equivalent | 2sc1318 | 2n3055 transistor equivalent | 2sc1740 | c3229 | c2078 transistor | 2sc458 transistors | 2sa992