AP6924GEY MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP6924GEY
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
|Id|ⓘ - Corriente continua de drenaje: 1 A
Tjⓘ - Temperatura máxima de unión: 125 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 53 nS
Cossⓘ - Capacitancia de salida: 17 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
Paquete / Cubierta: SOT-26
- Selección de transistores por parámetros
AP6924GEY Datasheet (PDF)
ap6924gey.pdf

AP6924GEYRoHS-compliant ProductAdvanced Power N-CHANNEL MOSFET WITH SCHOTTKYElectronics Corp. DIODEK Low On-Resistance BVDSS 20VSD Fast Switching Characteristic RDS(ON) 600m Included Schottky Diode ID 1AAASOT-26GDescriptionThe Advanced Power MOSFETs from APEC provide theDKdesigner with the best combination of fast switching, ruggedizeddevice desi
ap6926gmt.pdf

AP6926GMT-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD1 Simple Drive Requirement CH-1 BVDSS 40V Easy for Synchronous Buck RDS(ON) 40mG1Converter Application ID 15AD2/S1 RoHS Compliant & Halogen-Free CH-2 BVDSS 40VRDS(ON) 20mG2Description ID 24AS2Advanced Power MOSFETs from APEC provideG2G2 S2 S
ap6925gy.pdf

AP6925GYRoHS-compliant ProductAdvanced Power P-CHANNEL MOSFET WITH SCHOTTKYElectronics Corp. DIODED Low Gate Charge BVDSS -16VNCK Surface Mount Package RDS(ON) 150mG RoHS Compliant ID - 1.6ASSOT-26 AADDescriptionAdvanced Power MOSFETs from APEC provide theGdesigner with the best combination of fast switching,ruggedized device design, ultra lower
ap6922gmt-hf.pdf

AP6922GMT-HFHalogen-Free ProductAdvanced Power DUAL N-CHANNEL MOSFET WITHElectronics Corp. SCHOTTKY DIODED1 Simple Drive Requirement CH-1 BVDSS 30V Easy for Synchronous Buck RDS(ON) 8.5mG1Converter Application ID 48AD2/S1 RoHS Compliant & Halogen-Free CH-2 BVDSS 30VRDS(ON) 3.8mG2Description ID 87AS2Advanced Power MOSFETs from APEC provideG2G2 S2 S2
Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: BFW10 | IXFR80N60P3 | APT6025BVR | IXFK48N50Q | 2N7064 | FQD5N15TF | SI8405DB
History: BFW10 | IXFR80N60P3 | APT6025BVR | IXFK48N50Q | 2N7064 | FQD5N15TF | SI8405DB



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