AP70T03GJ-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP70T03GJ-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 53 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 105 nS

Cossⓘ - Capacitancia de salida: 245 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO-251

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AP70T03GJ-HF datasheet

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 ap70t03gh-hf ap70t03gj-hf.pdf pdf_icon

AP70T03GJ-HF

AP70T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast switching, ruggedized device des

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 ap70t03gjb.pdf pdf_icon

AP70T03GJ-HF

AP70T03GJB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 60A G RoHS Compliant & Halogen-Free S Description AP70T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos

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 ap70t03gj.pdf pdf_icon

AP70T03GJ-HF

AP70T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A G RoHS Compliant S Description AP70T03 series are from Advanced Power innovated design and silicon G D S TO-252(H) process technology to achieve the lowest possible on-

 6.1. Size:121K  ape
 ap70t03gi.pdf pdf_icon

AP70T03GJ-HF

AP70T03GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30V D Single Drive Requirement RDS(ON) 9m Full Isolation Package ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

MOSTRAR MÁS

Otros transistores... AP6982GN2-HF, AP6983GN2-HF, AP70L02GH, AP70L02GJ, AP70L02GP, AP70L02GS, AP70T03GH, AP70T03GI, IRFB4115, AP70T03GP, AP70T03GS, AP72T02GJ-HF, AP72T03GH, AP72T03GI-HF, AP72T03GJ, AP72T03GP-HF, AP72T12GP-HF