AP70T03GJ-HF. Аналоги и основные параметры

Наименование производителя: AP70T03GJ-HF

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 53 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 60 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

tr ⓘ - Время нарастания: 105 ns

Cossⓘ - Выходная емкость: 245 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.009 Ohm

Тип корпуса: TO-251

Аналог (замена) для AP70T03GJ-HF

- подборⓘ MOSFET транзистора по параметрам

 

AP70T03GJ-HF даташит

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 ap70t03gh-hf ap70t03gj-hf.pdf pdf_icon

AP70T03GJ-HF

AP70T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the G D S TO-252(H) designer with the best combination of fast switching, ruggedized device des

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 ap70t03gjb.pdf pdf_icon

AP70T03GJ-HF

AP70T03GJB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low On-resistance BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 60A G RoHS Compliant & Halogen-Free S Description AP70T03 series are from Advanced Power innovated design and silicon process technology to achieve the lowest pos

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 ap70t03gj.pdf pdf_icon

AP70T03GJ-HF

AP70T03GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low Gate Charge RDS(ON) 9m Fast Switching ID 60A G RoHS Compliant S Description AP70T03 series are from Advanced Power innovated design and silicon G D S TO-252(H) process technology to achieve the lowest possible on-

 6.1. Size:121K  ape
 ap70t03gi.pdf pdf_icon

AP70T03GJ-HF

AP70T03GI RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Performance BVDSS 30V D Single Drive Requirement RDS(ON) 9m Full Isolation Package ID 60A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

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