AP72T02GJ-HF Todos los transistores

 

AP72T02GJ-HF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP72T02GJ-HF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 60 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 62 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 250 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: TO-251
     - Selección de transistores por parámetros

 

AP72T02GJ-HF Datasheet (PDF)

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 ap72t02gh.pdf pdf_icon

AP72T02GJ-HF

AP72T02GH/J-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D BVDSS 25V Simple Drive Requirement RDS(ON) 9m Low On-resistance ID 62A Fast Switching Characteristic G RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the

 6.2. Size:104K  ape
 ap72t02gh j-hf.pdf pdf_icon

AP72T02GJ-HF

AP72T02GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 25V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device de

 8.1. Size:94K  ape
 ap72t03gp.pdf pdf_icon

AP72T02GJ-HF

AP72T03GPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 65AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance

 8.2. Size:96K  ape
 ap72t03gh ap72t03gj.pdf pdf_icon

AP72T02GJ-HF

AP72T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62AGSDescriptionGDS TO-252(H)Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design,

MOSTRAR MÁS

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: STP55N06L | BUZ358 | STP33N65M2 | RFL1N10L | AUIRF2804

 

 
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