AP72T02GJ-HF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP72T02GJ-HF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 62 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 80 nS

Cossⓘ - Capacitancia de salida: 250 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: TO-251

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AP72T02GJ-HF datasheet

 6.1. Size:192K  ape
 ap72t02gh.pdf pdf_icon

AP72T02GJ-HF

AP72T02GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D BVDSS 25V Simple Drive Requirement RDS(ON) 9m Low On-resistance ID 62A Fast Switching Characteristic G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the

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 ap72t02gh j-hf.pdf pdf_icon

AP72T02GJ-HF

AP72T02GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 25V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62A G RoHS Compliant S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device de

 8.1. Size:94K  ape
 ap72t03gp.pdf pdf_icon

AP72T02GJ-HF

AP72T03GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 65A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance

 8.2. Size:96K  ape
 ap72t03gh ap72t03gj.pdf pdf_icon

AP72T02GJ-HF

AP72T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62A G S Description G D S TO-252(H) Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design,

MOSTRAR MÁS

Otros transistores... AP70L02GJ, AP70L02GP, AP70L02GS, AP70T03GH, AP70T03GI, AP70T03GJ-HF, AP70T03GP, AP70T03GS, 8205A, AP72T03GH, AP72T03GI-HF, AP72T03GJ, AP72T03GP-HF, AP72T12GP-HF, AP730P, AP73T02GH-HF, AP73T02GJ-HF