AP72T02GJ-HF
MOSFET. Datasheet pdf. Equivalent
Type Designator: AP72T02GJ-HF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 60
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 62
A
Tjⓘ - Maximum Junction Temperature: 175
°C
trⓘ - Rise Time: 80
nS
Cossⓘ -
Output Capacitance: 250
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.009
Ohm
Package:
TO-251
AP72T02GJ-HF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP72T02GJ-HF
Datasheet (PDF)
6.1. Size:192K ape
ap72t02gh.pdf 
AP72T02GH/J-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D BVDSS 25V Simple Drive Requirement RDS(ON) 9m Low On-resistance ID 62A Fast Switching Characteristic G RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide the
6.2. Size:104K ape
ap72t02gh j-hf.pdf
AP72T02GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 25V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Gruggedized device de
8.1. Size:94K ape
ap72t03gp.pdf
AP72T03GPRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 65AGSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance
8.2. Size:96K ape
ap72t03gh ap72t03gj.pdf
AP72T03GH/JRoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62AGSDescriptionGDS TO-252(H)Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggedized device design,
8.3. Size:93K ape
ap72t03gi-hf.pdf
AP72T03GI-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Low On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 62AG RoHS CompliantSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,GDruggedized device
8.4. Size:96K ape
ap72t03gj-hf.pdf
AP72T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62AG RoHS Compliant & Halogen-FreeSDescriptionGDS TO-252(H)Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast s
8.5. Size:229K ape
ap72t03gh-hf ap72t03gj-hf.pdf
AP72T03GH/J-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9m Fast Switching Characteristic ID 62AG RoHS Compliant & Halogen-FreeSDescriptionGDAP72T03 series are from Advanced Power innovated design and siliconS TO-252(H)process technology to
8.6. Size:94K ape
ap72t03gp-hf.pdf
AP72T03GP-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS 30V Low On-resistance RDS(ON) 9.5m Fast Switching Characteristic ID 65AG RoHS Compliant & Halogen-FreeSDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,ruggediz
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